In research to be shared at the prestigious 56th International Reliability Physics Symposium (IRPS), researchers from the Indian Institute of Science Bangalore (IISc) will present a paper that details a breakthrough in significantly improving the reliability limits of 3D FinFET technology in sub-14nm technology for System-on-Chip integration. The study is the result of work in collaboration with Intel that sought to better understand various aspects of electrostatic discharge (ESD), latch-up and hot carrier reliability of ultra-dense FinFET technologies.
A metal- and additive-free, one-pot reaction achieves the highly sought-after meta-C-S bond formation on anilines, yielding potent S-aryl dithiocarbamates that disrupt breast cancer cell division.